sot23 pnp silicon planar medium power high performance transistor issue 5 - january 1997 j features * low equivalent on-resistance; r ce(sat) 250m w at 1a partmarking details - 589 complementary type - fmmt489 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -5 v peak pulse current i cm -2 a continuous collector current i c -1 a base current i b -200 ma power dissipation at t amb =25c p tot 500 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. max. unit conditions. collector-base breakdown voltage v (br)cbo -50 v i c =-100 m a collector-emitter breakdown voltage v (br)ceo -30 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 v i e =-100 m a collector cut-off current i cbo -100 na v cb =-30v collector -emitter cut-off current i ces -100 na v ces =-30v emitter cut-off current i ebo -100 na v eb =-4v collector-emitter saturation voltage v ce(sat) -0.25 -0.35 -0.65 v v v i c =-0.5a, i b =-50ma* i c =-1a, i b =-100ma* i c =-2a, i b =-200ma* base-emitter saturation voltage v be(sat) -1.2 v i c =-1a, i b =-100ma* base-emitter turn-on voltage v be(on) -1.1 v i c =-1a, v ce =-2v* static forward current transfer ratio h fe 100 100 80 40 300 i c =-1ma, v ce =-2v* i c =-500ma, v ce =-2v* i c =-1a, v ce =-2v* i c =-2a, v ce =-2v* transition frequency f t 100 mhz i c =-100ma, v ce =-5v f=100mhz output capacitance c obo 15 pf v cb =-10v, f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% for typical characteristics graphs see fmmt549 datasheet FMMT589 c b e 3 - 136
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